Rheological properties of SiC slurry and direct-ink writing of porous ceramic
WANG Xiaofeng1,2, LIU Zirui1, ZHOU Hongli1, PENG Xiang1, WANG Richu1, ZENG Jing3
1. School of Materials Science and Engineering, Central South University, Changsha 410083, China; 2. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China; 3. School of Metallurgy and Environment, Central South University, Changsha 410083, China
Abstract:In order to achieve precise control and free design of pore structure and size in porous SiC ceramics, based on the direct-ink writing of SiC porous ceramics, the effects of dispersant type and content, pH value, solid phase volume fraction, and thickener on the rheological properties of SiC slurry were studied, and then 3D porous structured SiC ceramics with controllable pore structure and size were prepared using the optimized slurry. The results indicate that the viscosity of slurry decreases first and then increases with the increment of the content of dispersant tetramethylammonium hydroxide (TMAH); pH value greater than 10 is conducive to reducing the viscosity of the slurry; the viscosity of slurry increases first and then decreases with the increment of solid phase volume fraction, having a maximum achievable solid volume fraction of 60%; the yield stress of the slurry continuously increases with increasing the addition of methyl cellulose (MC) as thickener. Optimized SiC slurry is obtained with TMAH mass fraction of 0.4%, pH value >10, solid phase volume fraction of 60%, and MC mass fraction of 0.06%. The SiC porous ceramics produced by using the slurry and direct-ink writing exhibit the advantages of high structural integrity and low drying shrinkage rate.
王小锋, 刘子瑞, 周红莉, 彭翔, 王日初, 曾婧. SiC浆料的流变性能及多孔陶瓷的直写成型[J]. 粉末冶金材料科学与工程, 2023, 28(6): 580-586.
WANG Xiaofeng, LIU Zirui, ZHOU Hongli, PENG Xiang, WANG Richu, ZENG Jing. Rheological properties of SiC slurry and direct-ink writing of porous ceramic. Materials Science and Engineering of Powder Metallurgy, 2023, 28(6): 580-586.
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