Effect of cemented carbide grain size on diamond coating
HUA Tengyu1, XIA Xin1, MA Li1, WEI Qiuping1,2, SHI Pengcheng3, 4
1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China; 2. School of Materials Science and Engineering, Central South University, Changsha 410083, China; 3. Laboratory of Space Science and Low-light Detection Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China; 4. College of Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
Abstract：Boron-doped diamond coatings were deposited on YG6 cemented carbide substrates with different grain sizes (0.4, 0.6, 1.0 and 2.0 μm) by hot wire chemical vapor deposition. The morphology and composition of the cemented carbide substrates were characterized, and the morphology, structure, composition and adhesion of the diamond coating were also analyzed by scanning electron microscope, X-ray diffraction, Raman spectroscopy and Rockwell hardness tester. The effects of grain size of cemented carbide substrates on the growth and adhesion properties of diamond coatings were studied and compared. The results show that with the grain size of cemented carbide increasing from 0.4 μm to 2.0 μm, the grain size of diamond gradually increases and its uniformity is better. The peak intensity ratio (ID/IG) of diamond and graphite Raman peaks increases from 4.74 to 6.53. There is a good correlation between the film substrate bonding performance and the internal stress of the coating, as well as the half peak width of diamond, which are affected by the grain mismatch of the matrix alloy, while the internal stress of the coating is also affected by boron doping. When the cemented carbide grain size is 2.0 μm, the diamond coating has the maximum ID/IG ratio of 6.53. The internal stress of diamond coating is also the lowest, which is only 1.588 GPa. And the film-substrates adhesion is optimal that can reach the HF1 level under the pressure of 600 N.
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2023, Vol. 28 
