Preparation and properties of AlN/Si3N4/PI composites
WU Yunxiang1,2, LEI Ting1, GAO Jiming2, YANG Yang3
1. State Key Laboratory of Powder Metallurgy, Changsha 410083, China; 2. Zhuzhou Times New Material Technology Co., Ltd., Zhuzhou 412007, China; 3. Jones Technology (Wuxi) Co., Ltd., Wuxi 214028, China
Abstract:High thermal conductivity polyimide composites have good development prospects in integrated electronic circuits, aerospace and other fields because of their good comprehensive properties. In this paper, silicon nitride whiskers and aluminum nitride particles with high thermal conductivity were selected as inorganic fillers, and surface modification was made with titanate coupling agent, and silicon nitride whiskers/aluminum nitride particles/polyimide (AlN/Si3N4/PI) composite films were synthesized in situ. The structure and properties of the composite films were characterized by scanning electron microscopy (SEM), Hot Disk tester and tensile tester. The results show that when the volume ratio of AlN/Si3N4 is 4:2, the composite filler forms a good thermal conductivity network in the matrix. When the total filler volume fraction reaches 30%, the thermal conductivity of the composite film reaches the maximum of 0.84 W/(m·K). The mechanical properties of the composites decrease with the increase of filler content, and the heat resistance increases with the increase of filler content.
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