三位置掺杂对BiCuSeO功能陶瓷热电性能的影响

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摘要对BiCuSeO功能陶瓷进行Bi/Cu/Se三位置掺杂,采用机械合金化和放电等离子烧结工艺制备Bi_1-_xBa_x_/2- Pb_x_/2Cu_1-_xNi_xSe_1-_xTe_xO (x = 0,0.02,0.04,0.06,0.08,0.10,摩尔分数)陶瓷,通过掺杂前后的物相组成、组织结构、电传输参数、热传输参数等表征,研究三位置掺杂对BiCuSeO功能陶瓷热电性能的影响和强化机理。结果表明,三位置掺杂可杂糅几种元素的增益效果,使BiCuSeO功能陶瓷保持较高Seebeck系数的前提下,电导率和功率因子显著提高。最佳掺杂量x为0.10,所得Bi_0.90Ba_0.05Pb_0.05Cu_0.90Ni_0.10Se_0.90Te_0.10O陶瓷在873 K温度下获得最高功率因子0.71 mW/(m·K²)和最大热电优值1.06,分别约为未掺杂陶瓷的2.5倍和2倍。

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	冯波

关键词 ：热电陶瓷, 多掺杂, 电传输性能, 热传输性能, 固溶强化, 热电优值

Abstract：BiCuSeO functional ceramics were doped by Bi/Cu/Se, and Bi_1-_xBa_x_/2Pb_x_/2Cu_1-_xNi_xSe_1-_xTe_xO (x=0, 0.02, 0.04, 0.06, 0.08, 0.10) ceramics were prepared by mechanical alloying (MA) and spark pressing sintering (SPS) process. The phase, microstructure, electrical transport parameters and thermal transport parameters were analyzed before and after doping to study the influence on the thermoelectric properties of BiCuSeO functional ceramics. The results indicate that three position doping can hybridize the beneficial effects of several elements, which can significantly improve the conductivity and power factor of BiCuSeO functional ceramics while maintaining a high Seebeck coefficient. The best doping amount x is 0.10. The highest power factor of 0.71 mW/(m∙K²) and the maximum thermal power value of 1.06 are obtained at 873 K, which are about 2.5 times and 2 times of undoped ceramics.

Key words： thermoelectric ceramics multi doping electrical transport properties thermal properties solid solution strengthening thermoelectric figure of merit

收稿日期: 2021-03-15 出版日期: 2021-09-26

ZTFLH:

TG15

通讯作者: 冯波,讲师,博士。电话：19945021442;E-mail: wdufengbo@163.com

引用本文:

冯波. 三位置掺杂对BiCuSeO功能陶瓷热电性能的影响[J]. 粉末冶金材料科学与工程, 2021, 26(4): 306-312.
FENG Bo. Effect of three-position doping on thermoelectric properties of BiCuSeO based functional ceramics. Materials Science and Engineering of Powder Metallurgy, 2021, 26(4): 306-312.

链接本文:

http://pmbjb.csu.edu.cn/CN/ 或 http://pmbjb.csu.edu.cn/CN/Y2021/V26/I4/306

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