Abstract：Using C/C composite processing residue as a carbon source and thoroughly mixing with silicon powder, silicon carbide powder for single crystal growth was prepared by high-temperature synthesis method. The microstructure and surface properties of silicon carbide powder were studied. The results indicate that the crystal form of the prepared silicon carbide powder is β-SiC, and the powder partially inherits the tubular and ridge-like structures of C/C composite processing residues. In Raman spectra, the ratio of the full width at half maximum of the folded transverse optic to the folded longitudinal optic of the powder is 0.709, and its relative purity is higher than that of silicon carbide powder prepared by the same process using graphite powder as the carbon source. The silicon carbide powder has porous characteristics with a specific surface area of 25.742 6 m2/g, and can be used for physical vapor transport single crystal growth process, furthermore, its feasibility has been preliminarily verified.
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2024, Vol. 29 
