泡沫SiC基亚氧化钛电极的制备及电催化氧化酸性橙G的性能

doi:10.19976/j.cnki.43-1448/TF.2024030

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Abstract Three dimensional foam SiC based titanium suboxide (SiC/Ti_nO₂_n_-1) electrode was prepared by sol-gel sintering method. The surface morphology, phase composition, and electrochemical property of titanium suboxide electrodes were characterized by scanning electron microscopy, X-ray diffraction, and electrochemical workstation. The degradation effect of organic pollutants was tested using a ultraviolet-visible spectrophotometer. The results show that the coating of foam SiC based titanium suboxide electrode prepared at 1 050 ℃/2 h sintering condition has good quality, continuous and uniform distribution, and the content of conductive phase Ti₄O₇ is the highest (mass fraction is 37.5%), the film charge transfer resistance is the lowest (16.75 Ω). It shows a faster degradation rate (reaction rate constant is 0.60 h^-1) and lower energy consumption (11.63 (kW∙h)/m³) for simulated pollutant acid orange G. Both •OH and

$\mathrm{SO}_{4}^{.-}$ are involved in the degradation of acid orange G, and their contributions to the removal of acid orange G are almost the same. The presence of inorganic ions

$\mathrm{HCO}_{3}^{-}$ ,

$\mathrm{NO}_{3}^{-}$ ,

$\mathrm{H}_{2} \mathrm{PO}_{4}^{-}$ has an inhibitory effect on the degradation of acid orange G, while Cl^- promotes the degradation. The electrode exhibits high stability in multiple degradations.

Key words： titanium suboxide electrode foam SiC matrix electrochemical property wastewater degradation electrochemical oxidation

Received: 29 March 2024 Published: 12 August 2024

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	YU Zhangjun
	WANG Xiang
	DENG Zejun
	MA Li
	WEI Qiuping

Cite this article:

YU Zhangjun,WANG Xiang,DENG Zejun, et al. Preparation of foam SiC-based titanium suboxide electrode and the performance of electrocatalytic oxidation acid orange G[J]. Materials Science and Engineering of Powder Metallurgy, 2024, 29(3): 221-230.

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http://pmbjb.csu.edu.cn/EN/10.19976/j.cnki.43-1448/TF.2024030 OR http://pmbjb.csu.edu.cn/EN/Y2024/V29/I3/221

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