CH3SiCl3-H2-Ar化学气相沉积SiC简化反应模拟

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Abstract In order to produce large area of uniform SiC coating, the study of the variation law of deposition rate at different positions in the reaction chamber was required. The process of chemical vapor deposition of CH₃SiCl₃-H₂-Ar system was simplified to a two-step reaction of gas phase cracking and surface deposition, and a two-dimensional reaction-transport model was established. The Computational Fluid Dynamics (CFD) software was used to analyze the effects of gas flow on the temperature field, velocity field, reactant concentration field and deposition rate in the direction of substrate height. The results show that, the deposition distribution shows different trends due to different retention time at different gas flow rates. The deposition thickness uniformity is better and the deposition rate is higher at moderate flow rates. Increasing the temperature can improve the inhomogeneity of deposition at high velocity. If the flow rate is constant and the pressure is too high, the natural convective vortex will be caused. The two-step simplified model can reflect the consumption of reactants and the uniformity of the coating under different conditions by comparing the calculated results with the relevant experimental data.

Key words： chemical vapor deposition SiC coating uniformity simulation reaction kinetics

Received: 18 December 2020 Published: 07 May 2021

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	HAN Qianwu
	LI Guodong

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HAN Qianwu,LI Guodong. Simplified reaction simulation of CH₃SiCl₃-H₂-Ar chemical vapor deposition SiC[J]. Materials Science and Engineering of Powder Metallurgy, 2021, 26(2): 99-107.

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http://pmbjb.csu.edu.cn/EN/ OR http://pmbjb.csu.edu.cn/EN/Y2021/V26/I2/99

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