等离子体渗硼对硬质合金表面金刚石涂层的影响

doi:10.19976/j.cnki.43-1448/TF.2024029

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Abstract After plasma boriding pretreatment, the diamond coating was deposited onto the surface of cemented carbide through hot filament chemical vapor deposition. The effects of pretreatmens on the growth quality and bonding properties of the diamond coating were investigated using scanning electron microscope, X-ray diffractometer, Raman spectrometer, and Rockwell hardness tester. The results indicate that as the plasma boriding temperature increases, CoWB content of the substrates surface increases while WC undergoes decarburization to form W. Plasma bombarding can increase the surface defect density of substrate and improve the nucleation rate of diamond. CoWB passivation layer and W transition layer can inhibit Co atom diffusion and improve the growth quality of diamond. Compared with an acid and alkali two-step method, the graphite phase content of diamond coating on cemented carbide surface after plasma boriding is significantly reduced, and the residual stress decreases with the increase of plasma boriding temperature. The reduction of graphite phase content and residual stress can improve the bonding properties between diamond coating and cemented carbide substrate, after pretreatment at 1 000 ℃, the bonding force of diamond coating on cemented carbide surface can reach the level of HF1.

Key words： cemented carbide plasma etching gas boriding chemical vapor deposition diamond coating bonding property

Received: 01 April 2024 Published: 12 August 2024

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	DING Sheng
	WANG Hailong
	MA Li
	WEI Qiuping

Cite this article:

DING Sheng,WANG Hailong,MA Li, et al. Effect of plasma boriding on diamond coating of cemented carbide surface[J]. Materials Science and Engineering of Powder Metallurgy, 2024, 29(3): 181-190.

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http://pmbjb.csu.edu.cn/EN/10.19976/j.cnki.43-1448/TF.2024029 OR http://pmbjb.csu.edu.cn/EN/Y2024/V29/I3/181

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