Microstructure and electrochemical properties of WO3-TiO2 thin films prepared by chemical deposition on semiconductor surface
WANG Zhongli1, JU Aiyun2
1. School of Electrical Engineering, Zhengzhou University of Science and Technology, Zhengzhou 450064, China; 2. Department of Mechanical and Electrical Engineering, Zhengzhou Vocational College of Science and Technology, Zhengzhou 451150, China
Abstract：Nano WO3-TiO2 films for semiconductors were prepared by chemical deposition with different end capping agents (SDBS or PEG), and their electrochromic properties were characterized. The results show that there is a large gap between the adjacent wafers of WO3-TiO2 thin film with SDBS, forming many cracks and agglomeration of particles. All the WO3-TiO2 thin film samples show short wave shift in the transmission spectrum under the colored condition. There is no significant change in the transmittance of the pigmented and faded WO3-TiO2 films with PEG. Better discoloration effect can be obtained when SDBS is selected as film Terminator. At the same time, the WO3-TiO2 film prepared with SDBS as the terminator has a higher current density than the WO3-TiO2 film prepared with PEG as the terminator. More ion implantation can be obtained, and the stability of film coloring and fading current is better.
王忠利, 琚爱云. 半导体表面化学沉积制备WO3-TiO2薄膜的组织及电化学性能[J]. 粉末冶金材料科学与工程, 2019, 24(6): 503-507.
WANG Zhongli, JU Aiyun. Microstructure and electrochemical properties of WO3-TiO2 thin films prepared by chemical deposition on semiconductor surface. Materials Science and Engineering of Powder Metallurgy, 2019, 24(6): 503-507.
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2019, Vol. 24 
