高温氧化协同原位掺硼提升金刚石薄膜的亲水性

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Abstract Hot filament chemical vapor deposition (HFCVD) was used to prepare high-quality diamond films and boron doped diamond films on single-crystal silicon substrates by using H₂, CH₄and B₂H₆ as gas source. After 600-800 ℃ high temperature oxidation treatment, the morphology, composition and hydrophilic of the diamond film were characterized by scanning electron microscope, Raman spectroscopy, X-ray diffraction and normal temperature contact angle instrument. The effects of high temperature oxidation and in-situ boron doping on the hydrophilic of diamond films were also studied. The results show that with the increase of high temperature oxidation temperature, the film was gradually etched to micropore morphology. The contact angle of pure diamond film decreases from 68.1° to 21.5° after oxidation at 700 ℃, and the hydrophilicity of the film is improved. With the increase of boron concentration, the micropores gradually disappear. The minimum contact angle is 14.1° when the boron-doped diamond film was prepared under the conditions of V(H₂):V(CH₄):V(B₂H₆)=97.0:3.0:0.4, and after oxidation at 800 ℃. Under the synergistic effect of in-situ boron doping and high-temperature oxidation, the composition of the film changes, and the perfect diamond configuration defects appear, as well as the surface energy of diamond film increases due to micropores. This method can effectively improve the hydrophilic of diamond film.

Key words： diamond hot filament chemical vapor deposition high temperature oxidation in-situ boron doping hydrophilic

Received: 07 January 2021 Published: 07 May 2021

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	Articles by authors
	YU Yanglei
	LI Songbo
	AN Junjie
	BAO Shengyou
	KANG Huiyuan
	KANG Aolong
	WEI Qiuping

Cite this article:

YU Yanglei,LI Songbo,AN Junjie, et al. Improving the hydrophilia of diamond film by high temperature oxidation and in situ boron doping[J]. Materials Science and Engineering of Powder Metallurgy, 2021, 26(2): 174-181.

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http://pmbjb.csu.edu.cn/EN/ OR http://pmbjb.csu.edu.cn/EN/Y2021/V26/I2/174

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