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Effect of B-site Hf doping on the structure and properties of 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 ceramics |
PENG Congfei, HUANG Rongxia, LI Jiajiu, XIONG Shunjin, LIN Huatai |
School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
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Abstract A series of HfO2-modified (Bi0.5Na0.5)0.94Ba0.06Ti1-xHfxO3(100BNBT-xHf, x=0-2.0, mole fraction) ceramics were prepared by solid state sintering method, and Hf element was doped into BNBT ceramics in the form of HfO2. The effects of Hf element on crystal structure, microstructure and electrical properties of 100BNBT-xHf samples were analyzed systematically. The results show that all 100BNBT-xHf ceramics with pure perovskite structure were near the morphotropic phase boundary. The addition of Hf can promote the grain growth of 100BNBT-xHf, and the average grain size of 100BNBT-1.0Hf were reached 2.30 μm. With the increase of Hf4+ content, the ceramic changed from normal ferroelectric phase to relaxor ferroelectric phase and then to paraelectric phase at room temperature. The 100BNBT-1.0Hf showed the best excellent ferroelectricity, while the 100BNBT-2.0Hf ceramics displayed the best energy storage characteristics, and the energy storage efficiency reached 38.23%. In terms of field-induced strain, a large electro-strain of 0.35% and a large piezoelectric coefficient of 583 pm/V were obtained at x=1.0.
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Received: 18 March 2020
Published: 11 August 2020
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