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Morphology and electrochemical performance of high temperature etching boron doped diamond electrode materials |
LIU Ting1, MIAO Dongtian2, WEI Qiuping1, MA Li2 |
1. School of Materials Science and Engineering, Central South University, Changsha 410083, China; 2. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China |
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Abstract The boron doped diamond electrode was prepared by hot filament chemical vapor deposition, and then heat- treated at 800 ℃ for oxidation to obtain the boron doped diamond electrode with irregular pore structure. The effects of heat-treatment etching time on the surface morphology and the ratio of Sp3 carbon and Sp2 carbon (Sp3/Sp2) of the electrode were studied. The results show that the best time of heat treatment is 30 minutes, and the electrochemical active area of the electrode after heat treatment is 2.14 times of that without heat treatment. Boron doped diamond electrode is used to degrade the organic wastewater with Reactive Blue 19 as the target, the color removal rate of Reactive Blue 19 from the treated electrode is 2.43 times than that from the untreated electrode, the removal rate of chemical oxygen demand from the electrode after heat treatment is 1.89 times than that from the electrode without heat treatment, and the energy consumption to achieve the same chemical oxygen demand removal rate is lower than that of untreated electrode. This etching technology does not pollute the surface of boron doped diamond electrode. It is suitable for large area etching to improve the specific surface area of the electrode, and has a broad application prospect in the field of water treatment.
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Received: 25 December 2019
Published: 19 June 2020
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